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Imec achieves breakthrough in silicon photonics, paving the way for cost-effective and high-performance optical devices.
LEUVEN (Belgium), JANUARY 9, 2025—
Imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, has announced a significant milestone in silicon photonics with the successful demonstration of electrically-driven GaAs-based multi-quantum-well nano-ridge laser diodes fully, monolithically fabricated on 300 mm silicon wafers in its CMOS pilot prototyping line. Achieving room-temperature continuous-wave lasing with threshold currents as low as 5 mA and output powers exceeding 1 mW, the results, detailed in last week’s Nature publication, demonstrate the potential of direct epitaxial growth of high-quality III-V materials on silicon. This breakthrough provides a pathway to the development of cost-effective, high-performance optical devices for applications in data communications, machine learning and artificial intelligence.
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