II‐VI Incorporated (Nasdaq: IIVI), a global leader in optical communications components and subsystems, today announced the introduction of its high-speed indium phosphide (InP) electro-absorption modulated lasers (EML) for datacenters and the 5G optical access infrastructure.
The upcoming combined demand for 400 Gbps transceivers in intra-datacenters and for 25 Gbps transceivers in fronthaul links to 5G antennas is rapidly driving a technology shift from directly modulated laser (DML) devices, deployed in high volume today, to more advanced EML devices that maintain transmission reach at higher bit rates. II-VI’s EML devices are designed for high reliability and high signal integrity, enabling transceiver modules operating at data rates of 100, 200, 400, and 800 Gbps for high-speed datacenter connectivity and for optical access networks that provide fronthaul, midhaul, and backhaul connectivity to 5G wireless base stations.
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