Apart from the indispensable contributions of vertical cavity surface-emitting lasers (VCSELs) to the development of modern optoelectronic technologies, their problem of arbitrary beam shaping within a compact system is still the same. But now a new research, led by Patrice Genevet of the Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications (CRHEA) at the University Côte d’Azur and collaborators at the key laboratory of Optoelectronics Technology at the Beijing University of Technology, has demonstrated a wafer-level non-intrusive and monolithic integration that solves these issues of arbitrary beam shaping of VCSELs by directly sculpturing their emitting surfaces into metasurfaces.
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